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本設備主要用于氮化鎵（GaN）單晶生長；
本設備主要用于氮化鎵（GaN）單晶生長；
適用領域： ?Bonding Relevant Industries: Bonding 適用材料: ?SiC Suitable for Processing: SiC (Silicon Carbide) 晶圓尺寸: ?12/8/6英寸 Wafer Size: 12/8/6 inch
適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8/6/4英寸,8英寸多坩堝 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles Provide6/8 inches process
適用領域：單晶生長 Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8/6/4英寸,8英寸多坩堝 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles
適用領域：單晶生長、EFG、LPE Application Fields: Single Crystal Growth, Edge-defined Film-fed Growth (EFG), Liquid Phase Epitaxy (LPE) 適用材料: ?SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶體 Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), YAP (Yttrium Aluminum Perovskite) and other crystals 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch