
產(chǎn)品展示
產(chǎn)品分類
適用領(lǐng)域: ?單晶生長(zhǎng) Relevant Industries:Single Crystal Growth 適用材料: ?Ga2O3、GaAs、InP等 Suitable for Processing: Ga2O3 (Gallium Oxide), GaAs (Gallium Arsenide), InP (Indium Phosphide) etc. 晶圓尺寸: ?12/8/6英寸 Wafer Size: 12/8/6 inch
適用領(lǐng)域:?jiǎn)尉L(zhǎng)、外延生長(zhǎng) Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN(單晶)、AIN(單晶/外延)、Ga2O3(外延)、GaAs(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
適用領(lǐng)域:?jiǎn)尉L(zhǎng)、外延生長(zhǎng) Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN(單晶)、AIN(單晶/外延)、Ga2O3(外延)、GaAs(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
適用領(lǐng)域: ?Bonding Relevant Industries: Bonding 適用材料: ?SiC Suitable for Processing: SiC (Silicon Carbide) 晶圓尺寸: ?12/8/6英寸 Wafer Size: 12/8/6 inch
適用領(lǐng)域:?jiǎn)尉L(zhǎng) Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8/6/4英寸,8英寸多坩堝 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles Provide6/8 inches process
適用領(lǐng)域:?jiǎn)尉L(zhǎng) Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8/6/4英寸,8英寸多坩堝 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles
適用領(lǐng)域:?jiǎn)尉L(zhǎng)、EFG、LPE Application Fields: Single Crystal Growth, Edge-defined Film-fed Growth (EFG), Liquid Phase Epitaxy (LPE) 適用材料: ?SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶體 Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), YAP (Yttrium Aluminum Perovskite) and other crystals 晶圓尺寸: ?12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
適用領(lǐng)域: ?單晶生長(zhǎng)、多晶熱沉 Relevant Industries: Single Crystal Growth, Polycrystalline Heat Sink Fabrication 適用材料: ?Diamond Suitable for Processing: Diamond 晶圓尺寸: ?8/6/4/3/2英寸 Wafer Size: 8/6/4/3/2 inch