產(chǎn)品分類
氮化鎵（GaN）HVPE單晶生長(zhǎng)設(shè)備 立式
所屬分類：
第三代半導(dǎo)體工藝設(shè)備
第四代半導(dǎo)體工藝設(shè)備
概要：
? 用于氮化鎵(GaN)單晶生長(zhǎng) ? 用于氧化鎵(Ga?O?)、氮化鋁(AIN)、磷化銦(InP)、砷化鎵(GaAs)外延生長(zhǎng)
關(guān)鍵詞：
HVPE單晶生長(zhǎng)設(shè)備 立式
氮化鎵（GaN）HVPE單晶生長(zhǎng)設(shè)備 立式
產(chǎn)品概述/Product Introduction：
♦ 用于氮化鎵(GaN)單晶生長(zhǎng)
Used for the growth of gllium nitride (GaN) single crystal
♦ 用于氧化鎵(Ga?O?)、氮化鋁(AIN)、磷化銦(InP)、砷化鎵(GaAs)外延生長(zhǎng)
Used for the epitaxial growth of gallium oxide (Ga?O?), aluminum nitride (AIN), indium. phosphide (InP) and gallium arsenide (GaAs)
產(chǎn)品特點(diǎn)/Product Characteristics：
♦ 基礎(chǔ)工藝包
Basic process package
1.氮化鎵(GaN)單晶生長(zhǎng)尺寸: 2英寸
Gallium nitride (GaN) single crystal growth size: 2 inches
2.單晶生長(zhǎng)速率:≥50微米/小時(shí)
Single crystal growth rate:≥50 microns/hour
3.藍(lán)寶石襯底外延生長(zhǎng)氮化鎵(GaN)單晶層厚度: < 200微米
Thickness of gallium nitride (GaN) single crystal layer grown by epitaxial growth at the bottom of sapphire village: < 200 microns
♦ 襯底: 2/4/6英寸
Substrate size: 2/4/6 inches
♦ 數(shù)量: 1片/多片
Quantity: 1 tablet/multiple tablets
♦ 立式/臥式結(jié)構(gòu)合理可靠，滿足客戶多種尺寸襯底，多種操作方式需要
Vertical/horizontal structure is reasonable and reliable, which can meet the needs of customers with various sizes of substrates and various operation modes
♦ 控溫精度高，溫區(qū)穩(wěn)定性好
High temperature control precision and good stability in temperature zone
♦ 完美可靠的安全保護(hù)功能:硬件保護(hù)+軟件互鎖
Perfect and reliable security protection function: Hardware protection + software interlock.
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